Electron Spin-based information shuttling for a computer system

Technology Area
Materials and qubit technologies

A silicon metal-oxide semiconductor device transports a spin-polarized single electron. An array of silicon quantum dot electrodes is arranged atop a silicon dioxide layer of a silicon metal-oxide semiconductor. The array comprises at least a first electrode and a second electrode adjacent to the first electrode. A transport control logic for individually controls a voltage applied to the electrodes. The transport control logic is configured to gradually decrease a voltage at the first electrode while gradually increasing a voltage at the second electrode. Localization of the single electron is adiabatically transferred from the first electrode to the second electrode while maintaining a desired energy gap between a ground state and a first excited state of the single electron.

Patent or Application Number
Issuance / Grant Date
Lead Licensing Institution
Sandia National Laboratories
IP was generated with QSA funds
Point of Contact
David Wick
Entity Account Email Address