A quantum dot structure having a split-gate geometry is provided. The quantum dot is configured for incorporation into a quantum dot array of a quantum processing unit. A gap between a reservoir accumulation gate and a quantum dot accumulation gate provides a tunnel barrier between an electric charge reservoir and a quantum dot well. An electrical potential applied to the gates defines a tunnel barrier height, width and charge tunneling rate between the well and the reservoir without relying on any barrier gate to control the charge tunneling rate.
Patent or Application Number10929769
Issuance / Grant Date
Lead Licensing InstitutionSandia National Laboratories
IP was generated with QSA fundsNo
Point of Contact
Entity Account Email Addressip@sandia.gov